IGBT, a new type of power semiconductor device, has the advantage of high input impedance, low conduction voltage drop, simple driving circuit, fast switching speeds, high current density, and so on.

Semiconductor Manufacturing Electronics (Shaoxing) Corporation (SMEC), which is a JV of SMIC Spin Off MEMS and Power Devices, dedicated to providing IGBT platform technologies since 2015, focusing on the latest generation of Trench +FS (field stop) IGBT structure. We have provided a whole set of advanced backside IGBT processes, which include temporary bonding and debonding to sustain Taiko wafer thinning process, wet etch, ion implant, laser anneal, and backside metal processes. 600V~1200V device general processes can be provided with device structure customization support.